PART |
Description |
Maker |
K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM48C2004C |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out(2M x 8位CMOS 动态RAM(带扩展数据输) 200万8位的扩展数据输出的CMOS动态RAM2米8位的CMOS动态随机存储器(带扩展数据输出))
|
Samsung Semiconductor Co., Ltd.
|
KM48C512D |
High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode(高12K x 8CMOS 动态RAM(带快速页模式))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
V53C806H V53C806H40 V53C806H45 V53C806H50 V53C806H |
High performance 1M x 8bit fast page mode CMOS dynamic RAM HIGH PERFORMANCE 1M x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ... Vanguard International Semiconductor, Corp.
|
HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模) 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group SIEMENS AG
|
HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器 4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http:// Infineon Technologies AG SIEMENS AG
|
IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM From old datasheet system 1Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
IC41C82052 IC41LV82052 IC41LV82052-60T IC41C82052- |
DYNAMIC RAM, FPM DRAM 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Half-duplex,15-kV ESD, 1/4 UL Transceiver 8-PDIP -40 to 85 200万86兆),充满活力和快速页面模式内
|
ICSI[Integrated Circuit Solution Inc] Omron Electronics, LLC
|